BDW83C NPN Darlington Power Transistor (15A, 150W, TO 3P, 1 Qty)

The BDW83C NPN Darlington Power Transistor is a high current silicon bipolar transistor designed for power switching, amplification and industrial electronic applications. Featuring a maximum collector current rating of 15A, collector power dissipation of 150W and high DC current gain, this transistor is suitable for high power amplifier circuits, motor control systems and electronic power switching equipment.

The BDW83C features a Darlington configuration consisting of two internally connected NPN transistors, providing high current amplification with relatively low base drive requirements. Its minimum DC current gain of 750 under specified test conditions makes it suitable for controlling high current electrical loads using appropriate driver circuits. The TO 3P package supports through hole mounting and efficient heat dissipation when installed with a suitable heat sink. Its complementary PNP transistor is the BDW84C, making it suitable for complementary power amplifier and driver configurations.

Key Features -

• BDW83C silicon NPN Darlington power transistor

• Maximum collector current rating of 15A

• Maximum collector power dissipation of 150W

• Minimum DC current gain of 750 under specified conditions

• Maximum emitter base voltage of 5V

• High current amplification using Darlington configuration

• TO 3P power package suitable for heat sink mounting

• Complementary to BDW84C PNP Darlington transistor

• Suitable for high power switching and amplifier applications

Specifications -

• Part Number: BDW83C

• Product Type: Darlington Power Transistor

• Transistor Type: NPN Bipolar Junction Transistor

• Transistor Configuration: Darlington Pair

• Semiconductor Material: Silicon

• Collector Base Voltage (VCBO): Requires Manufacturer Datasheet Verification

• Collector Emitter Voltage (VCEO): Requires Manufacturer Datasheet Verification

• Maximum Collector Current (IC): 15A

• Maximum Collector Power Dissipation (PC): 150W Under Specified Thermal Conditions

• Emitter Base Voltage (VEBO): 5V Maximum

• Minimum DC Current Gain (hFE): 750 Under Specified Test Conditions

• Package Type: TO 3P

• Mounting Type: Through Hole

• Number of Terminals: 3

• Terminal Configuration: Base, Collector and Emitter

• Control Type: Current Driven

• Operating Mode: Switching and Amplification

• Complementary Transistor: BDW84C

• Thermal Management: Suitable Heat Sink Required for High Power Operation

• Pack Quantity: 1 Qty (1 Piece)

Applications -

• High power audio amplifier output stages

• High current electronic switching circuits

• DC motor control and driver circuits

• Industrial automation and power control systems

• Relay and solenoid driver applications

• Power supply and voltage regulation circuits

• Complementary Darlington amplifier stages

• Electronic power control and engineering projects